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Spectroscopic ellipsometry (SE) was performed on CuIn Se 2 (CIS) thin films and solar cells with a goal toward optimizing this low bandgap absorber for tandem applications. The CIS thin films and the absorbers in devices were deposited by one-stage thermal co-evaporation on silicon and on Mo-coated soda-lime glass substrates in a deposition system that has yielded CuIn 1-x Ga x Se 2 (CIGS) cells with > 17% efficiency using standard thickness (2.0 μm)x = 0.3 absorbers and > 13% using 0.7 μm low-Ga absorbers. In this study, a mapping capability for CIS Cu stoichiometry y = [Cu]/[In] over the film area was established based on a y-dependent parametric dielectric function (ε 1 , ε 2 ) with bandgap critical point E g decreasing linearly from 1.030 eV for y = 0.7 to 1.016 eV for y = 1.1. In addition, a full set of (ε 1 , ε 2 ) spectra measured for the CIS cell components enables analysis of SE data in terms of an accurate structural model for the device. With this model, spectra in the external quantum efficiency can be predicted, and deviations from this prediction can be attributed to incomplete collection of photogenerated electrons and holes as simulated with a carrier collection profile. 

ABSTRACT Methods of obtaining large grain size and high crystallinity in absorber materials play an important role in fabrication of high-performance methylammonium lead iodide (MAPbI 3 ) perovskite solar cells. Here we study the effect of adding small concentrations of Cd 2+ , Zn 2+ , and Fe 2+ salts to the perovskite precursor solution used in the single-step solution fabrication process. Enhanced grain size and crystallinity in MAPbI 3 films were obtained by using 0.1% of Cd 2+ or Zn 2+ in the precursor solution. Consequently, solar cells constructed with Cd- and Zn-doped perovskite films show a significant improvement in device performance. These results suggest that the process may be an effective and facile method to fabricate high-efficiency perovskite photovoltaic devices.